| PART |
Description |
Maker |
| LC87F5932A08 |
Internal 32K-byte FROM and 1024-byte RAM 8-bit 1-chip Microcontroller
|
Sanyo Semicon Device
|
| LC87F40C8A |
Internal 128K-byte FROM (ROM/CGROM), 2048 byte RAM, 1024-byte CGRAM, and 704×10-bit CRT Display RAM 8-bit 1-chip Microcontroller
|
Sanyo Semicon Device
|
| ENA0965 LC877664B LC877648B LC877696B |
CMOS IC Internal 96K/80K/64K/48K-byte ROM 4096-byte RAM 8-bit 1-chip Microcontroller
|
Sanyo Semicon Device
|
| IDT71256 IDT71256L IDT71256L100D IDT71256L100DB ID |
Precision Adjustable (Programmable) Shunt Reference 8-CDIP -55 to 125 的CMOS静态RAM 256K2K的8位）
Dual Pulse-Width-Modulation Control Circuit 16-SSOP 的CMOS静态RAM 256K2K的8位）
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 25 ns, CDIP28
Single UART with 16-Byte FIFOs and Auto Flow Control 44-PLCC 0 to 70 的CMOS静态RAM 256K2K的8位）
CABLE SMA/SMA 36 RG-142 的CMOS静态RAM 256K2K的8位）
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 120 ns, CDIP28
Dual-Channel Pulse-Width-Modulation (PWM) Control Circuit 16-SSOP -20 to 85 的CMOS静态RAM 256K2K的8位）
CMOS STATIC RAM 256K (32K x 8-BIT) 的CMOS静态RAM 256K2K的8位）
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 30 ns, PDSO28
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 30 ns, PDIP28
Replaced by TL16C550C : Single UART with 16-Byte FIFO 40-PDIP 0 to 70
Single UART with 16-Byte FIFOs and Auto Flow Control 48-LQFP 0 to 70
1.8-V to 5-V Dual UART with 16-Byte FIFOs 48-TQFP 0 to 70
Replaced by TL16C550C : Single UART with 16-Byte FIFO 44-PLCC 0 to 70
Replaced by TL16C550C : Single UART with 16-Byte FIFOs 44-PLCC 0 to 70
Replaced by TL16C550C : Single UART with 16-Byte FIFOs 44-PLCC -40 to 85
Quad Pulse-Width-Modulation Control Circuit 48-LQFP -20 to 75
CMOS Static RAM 256k ( 32k X 8-bit )
|
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
Integrated Device Technolog...
|
| X28HC256D-12 X28HC256PZ-12 X28HC256PZ-15 X28HC256P |
256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: 0°C to 70°C; Package: 28-SOIC T&R 32K X 8 EEPROM 5V, 90 ns, PDSO28
256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 28-SOIC T&R 32K X 8 EEPROM 5V, 90 ns, PDSO28
256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 28-SOIC T&R 32K X 8 EEPROM 5V, 200 ns, PDSO28
256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: 0°C to 70°C; Package: 32-PLCC T&R 32K X 8 EEPROM 5V, 90 ns, PQCC32
256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 28-PDIP 32K X 8 EEPROM 5V, 90 ns, PDIP28
256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 32-PLCC 32K X 8 EEPROM 5V, 90 ns, PQCC32
256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: 0°C to 70°C; Package: 32-PLCC 32K X 8 EEPROM 5V, 90 ns, PQCC32
256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 32-PLCC T&R 32K X 8 EEPROM 5V, 90 ns, PQCC32
5V, Byte Alterable EEPROM
|
Intersil, Corp.
Intersil Corporation
|
| ATMEGA8515 ATMEGA8515L |
8-Kbyte self-programming Flash Program Memory, 544 Byte internal up to 64 Kbyte external SRAM, 512 Byte EEPROM. Up to 16 MIPS throughput at 16 Mhz.
8-Kbyte self-programming Flash Program Memory, 544 Byte internal up to 64 Kbyte external SRAM, 512 Byte EEPROM. Up to 8 MIPS throughput at 8 Mhz. 3 Volt Operation
|
Atmel
|
| AT90SC25672R AT90SC25672RT AT90SC320856 AT90SC3208 |
Low-power, High performance 8-bit/16-bit secure microcontroller with 256K Byte ROM, 72K Byte EEPROM. Security Features: MMU, MED, OTP (one time programmable) EEPROM area, RN (Random Number Generator), "out of bounds" detectors, side channe
Low-power, high-performance, 8-bit/16-bit secure microcontroller with 32K Byte ROM, 8K Byte FLASH and 56K Byte EEPROM.
Low-power, high-performance, 8-/16-bit secure microcontroller with 32K Byte FLASH and 32K Byte EEPROM.
Low-power, High performance 8-bit/16-bit secure microcontroller with 48K Byte ROM, 2K Byte EEPROM. Security Features: OTP (one time programmable) EEPROM area, RNG (Random Number Generator), "out of bounds" detectors, side channel attack co
Low-power, high-performance, 8-/16-bit secure microcontroller with 48K Byte ROM and 16K Byte EEPROM.
Low-power, High Performance 8-bit/16-bit secure microcontroller with 64K Byte ROM, 4K Byte EEPROM. Security Features: OTP (one time programmable) EEPROM area, RNG (Random Number Generator), "out of bounds" detectors, side channel attack co
Low-power, High performance 8-bit/16-bit secure microcontroller with 96K Byte ROM, 8K Byte EEPROM. Security Features: OTP (one time programmable) EEPROM area, RNG (Random Number Generator), "out of bounds" detectors, side channel attack co
Low-power, high-performance, 8-/16-bit secure microcontroller with 64K Byte ROM and 64K Byte EEPROM.
Low-power, high-performance, 8-/16-bit secure microcontroller with 64K Byte ROM and 32K Byte EEPROM.
Low-power, high-performance, 8-/16-bit secure microcontroller with 96K Byte ROM and 16K Byte EEPROM.
|
Atmel
|
| ST10 ST10C167 ST10C167-Q6XX ST10C167-Q3_XX ST10C16 |
16-BIT MCU WITH 32K BYTE ROM
|
STMICROELECTRONICS[STMicroelectronics]
|
| WM2633IDT WM2633 WM2633CDT |
From old datasheet system
Byte-wide Parallel Input, 12-bit Voltage Output DAC with Internal Reference
|
WOLFSON[Wolfson Microelectronics plc]
|
| AT90SC9636R |
AT90SC9636R Summary [Updated 06/03. 3 Pages] Summary of the AT90SC9636R giving the key features. a brief description and a block diagram.
Low-power, High performance 8-bit/16-bit secure microcontroller with 96K Byte ROM, 36K Byte EEPROM, programmable internal oscillator. Security Features: MMU, MED, OTP (one time programmable) EEPROM area, RN (Random Number Generator), "out
|
Atmel
|
| S3C8075 S3P8075 |
SAM87 family of 8-bit single-chip CMOS microcontrollers, 272-byte general purpose register area, 16-Kbyte internal program memory
|
SAMSUNG[Samsung semiconductor]
|
| NAND02G-B2C NAND02GR3B2BZA1E NAND02GR4B2BZA1F NAND |
1千兆2千兆位，2112 Byte/1056字的页面.8V/3VNAND闪存
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位，2112 Byte/1056字的页面.8V/3V，NAND闪存
|
意法半导
STMicroelectronics N.V.
|
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